All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Synthesis of graphene on Co/SiC structure

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43896494" target="_blank" >RIV/60461373:22310/13:43896494 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/13:00436933

  • Result on the web

    <a href="http://dx.doi.org/10.1007/s10854-013-1320-1" target="_blank" >http://dx.doi.org/10.1007/s10854-013-1320-1</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s10854-013-1320-1" target="_blank" >10.1007/s10854-013-1320-1</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Synthesis of graphene on Co/SiC structure

  • Original language description

    Bi-layer graphene sheets have been prepared on the basis of a reaction of cobalt with silicon carbide at temperatures around 1,000 A degrees C. This is a type of viable low temperature graphene synthesis. Preparation of graphene was carried out with various thicknesses of the Co layer deposited onto the SiC surface and parameters of the annealing process (temperature, annealing time) were varied. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined from the resultsof Raman spectroscopy. The best results have been obtained for a structure with Cobalt layer of 300 nm thickness, annealed at 1,080 A degrees C for the period of 120 s. When using shorter annealing times, significantly non-homogenous reaction of Co withSiC has been observed, forming two different phases on the surface.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

  • ISSN

    0957-4522

  • e-ISSN

  • Volume of the periodical

    24

  • Issue of the periodical within the volume

    10

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    7

  • Pages from-to

    3793-3799

  • UT code for WoS article

    000324325800027

  • EID of the result in the Scopus database