Synthesis of graphene on Co/SiC structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F13%3A43896494" target="_blank" >RIV/60461373:22310/13:43896494 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/13:00436933
Result on the web
<a href="http://dx.doi.org/10.1007/s10854-013-1320-1" target="_blank" >http://dx.doi.org/10.1007/s10854-013-1320-1</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-013-1320-1" target="_blank" >10.1007/s10854-013-1320-1</a>
Alternative languages
Result language
angličtina
Original language name
Synthesis of graphene on Co/SiC structure
Original language description
Bi-layer graphene sheets have been prepared on the basis of a reaction of cobalt with silicon carbide at temperatures around 1,000 A degrees C. This is a type of viable low temperature graphene synthesis. Preparation of graphene was carried out with various thicknesses of the Co layer deposited onto the SiC surface and parameters of the annealing process (temperature, annealing time) were varied. Number of carbon mono-layers in the prepared graphene and its crystallinity were determined from the resultsof Raman spectroscopy. The best results have been obtained for a structure with Cobalt layer of 300 nm thickness, annealed at 1,080 A degrees C for the period of 120 s. When using shorter annealing times, significantly non-homogenous reaction of Co withSiC has been observed, forming two different phases on the surface.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN
0957-4522
e-ISSN
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Volume of the periodical
24
Issue of the periodical within the volume
10
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
3793-3799
UT code for WoS article
000324325800027
EID of the result in the Scopus database
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