Graphene preparation by annealing of Co/SiC structure

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00448161" target="_blank" >RIV/68378271:_____/14:00448161 - isvavai.cz</a>
Alternative codes found
RIV/60461373:22310/14:43897940
Result on the web
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.09.104" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.09.104</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2014.09.104" target="_blank" >10.1016/j.apsusc.2014.09.104</a>

Result language
angličtina
Original language name
Graphene preparation by annealing of Co/SiC structure
Original language description
This work is focused on graphene preparation using the segregation method with Co/SiC structure, the method being a viable low temperature synthesis approach. The graphene preparation was carried out with the cobalt layer of 300 nm thickness; the technological process is based on an optimization of parameters (temperature and duration) of annealing which is a crucial step of the synthesis. 850 °C as an annealing temperature and 10 s as an annealing duration have been found to be the most optimal. The prepared graphene is close to the bi-layer graphene structure with its parameters. Structural parameters of the prepared graphene were determined from spectra obtained by Raman spectroscopy.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JJ - Other materials
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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