Direct growth of graphene on SiO2/Si substrate

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43900940" target="_blank" >RIV/60461373:22310/15:43900940 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Direct growth of graphene on SiO2/Si substrate

Original language description

This work is focused on graphene preparation using the transfer-free method from a metal/C/SiO2/Si structure. We used nickel and cobalt as the metal layer. The technological process is based on an optimization of metal thickness and annealing parameters (temperature and duration). We successfully prepared bi-layer graphene.

Czech name

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Czech description

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Type

O - Miscellaneous

CEP classification

JJ - Other materials

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů