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Graphene growth by transfer-free CVD metod using cobalt/nickel catalyst layer

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43917069" target="_blank" >RIV/60461373:22310/18:43917069 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.919.207" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.919.207</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.919.207" target="_blank" >10.4028/www.scientific.net/MSF.919.207</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Graphene growth by transfer-free CVD metod using cobalt/nickel catalyst layer

  • Original language description

    Graphene has been long considered for application in electronics manufacturing due to its extraordinary electronic, mechanical and thermal properties. This paper focuses on the graphene preparation onto dielectric substrate using transfer-free chemical vapour deposition (CVD) method with an intermediate catalytic metal layer (cobalt, nickel). Graphene layers were formed via segregation mechanism at temperatures in the range of 850 - 1050 °C onto the metal-dielectric boundary. Evaluated Raman spectra, which reveal the number of graphene layers and their defectivity suggested, that thinner metal layer and balanced ratio of H2:CH4 yield the best results for both cobalt and nickel layer. Spectra showed low amount of defects and the average number of carbon layers between 2-3, however, single-layer graphene (SLG) samples were also prepared. Scanning electron microscopy images showed that graphene domains on larger scale are not fully continuous.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>ost</sub> - Miscellaneous article in a specialist periodical

  • CEP classification

  • OECD FORD branch

    20501 - Materials engineering

Result continuities

  • Project

    <a href="/en/project/GA17-00607S" target="_blank" >GA17-00607S: Complex Artificial Electromagnetic Structures and Nanostructures</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Materials Science Forum

  • ISSN

    0255-5476

  • e-ISSN

  • Volume of the periodical

    919

  • Issue of the periodical within the volume

    January

  • Country of publishing house

    CH - SWITZERLAND

  • Number of pages

    8

  • Pages from-to

    207-214

  • UT code for WoS article

  • EID of the result in the Scopus database