Direct growth of graphene on SiO2/Si substrate

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F16%3A43902646" target="_blank" >RIV/60461373:22310/16:43902646 - isvavai.cz</a>

Result on the web

<a href="http://147.228.94.30/images/PDF/Rocnik2016/Cislo1_2016/r10c1c8.pdf" target="_blank" >http://147.228.94.30/images/PDF/Rocnik2016/Cislo1_2016/r10c1c8.pdf</a>

DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Direct growth of graphene on SiO2/Si substrate

Original language description

This work is focused on graphene preparation using the transfer-free method from a metal/C/SiO2/Si structure. We used nickel and cobalt as the metal layer. The technological process of graphene preparation is based on an optimization of metal thickness and annealing parameters (temperature and duration). We successfully prepared bi-layer graphene.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JJ - Other materials

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ElectroScope

ISSN

1802-4564

e-ISSN

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Volume of the periodical

2016

Issue of the periodical within the volume

1

Country of publishing house

CZ - CZECH REPUBLIC

Number of pages

3

Pages from-to

1-3

UT code for WoS article

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EID of the result in the Scopus database

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