Graphene growth from the metal/carbon/SiO2 structure
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43916527" target="_blank" >RIV/60461373:22310/18:43916527 - isvavai.cz</a>
Result on the web
<a href="https://content.sciendo.com/view/journals/jee/69/3/article-p239.xml" target="_blank" >https://content.sciendo.com/view/journals/jee/69/3/article-p239.xml</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.2478/jee-2018-0032" target="_blank" >10.2478/jee-2018-0032</a>
Alternative languages
Result language
angličtina
Original language name
Graphene growth from the metal/carbon/SiO2 structure
Original language description
The paper presents results related to graphene growth by the method of precipitation on the boundary between a transition metal (nickel or cobalt) and a dielectric (SiO2). The source of graphene is a thin evaporated carbon layer. Carbon in the annealing process diffunds through the transition metal and precipitates on the surface of the dielectric substrate as the structure cools down. Relatively thick layer of copper, which is evaporated over carbon as a cover, prevents carbon to diffund to the surface of the metallization. The structure of the metallization for graphene forming is then Cu/C/(transition metal)/SiO2/Si. We consider the utilization of the diffusion barrier to be the contribution of our work to graphene formation using this method. Even though both transition metals are of similar features, the necessary conditions for growth of high-quality graphene are different. In case of nickel, long annealing times within the whole range of annealing temperatures are necessary, while in case of structures with cobalt annealing time of 20 minutes at 900 degrees C is enough for graphene growth. By annealing the Cu(300 nm)/C(20 nm)/Ni(50 nm)/SiO2 structure at the temperature of 800 degrees C for 60 minutes we obtained single-layer graphene (SLG).
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/GA17-00607S" target="_blank" >GA17-00607S: Complex Artificial Electromagnetic Structures and Nanostructures</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electric Engineering (Elektrotechnicky Casopis)
ISSN
1335-3632
e-ISSN
—
Volume of the periodical
69
Issue of the periodical within the volume
3
Country of publishing house
SK - SLOVAKIA
Number of pages
6
Pages from-to
239-244
UT code for WoS article
000440649100008
EID of the result in the Scopus database
—