Mobility of Single Sn Atoms Inside Si(111)-7x7 Half-unit Cells

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10290763" target="_blank" >RIV/00216208:11320/14:10290763 - isvavai.cz</a>
Result on the web
<a href="http://www.mff.cuni.cz/veda/konference/wds/proc/pdf14/WDS14_27_f5_Rozboril.pdf" target="_blank" >http://www.mff.cuni.cz/veda/konference/wds/proc/pdf14/WDS14_27_f5_Rozboril.pdf</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Mobility of Single Sn Atoms Inside Si(111)-7x7 Half-unit Cells
Original language description
Low coverage phases of Sn on Si(111)-7x7 were investigated by scanning tunneling microscopy. At room temperature, a single Sn atom is highly mobile inside a half-unit cell of the surface reconstruction. Its mobility was studied by observing fluctuationsof the tunneling current, which allows detecting the movement of the adatom with sub-millisecond resolution. The movement pattern of the atom inside the half-unit cell appears to consist of fast hops between central positions and three corner positions.The Sn atom was found to be much more mobile inside the faulted half-unit cell, where the hopping frequency is also significantly affected by the presence of the STM tip.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
WDS 2014 - Proceedings of Contributed Papers - Physics
ISBN
978-80-7378-276-4
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
153-158
Publisher name
Matfyzpress
Place of publication
Praha
Event location
Praha
Event date
Jun 3, 2014
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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