Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10290876" target="_blank" >RIV/00216208:11320/14:10290876 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/14:00436758

Result on the web

<a href="http://dx.doi.org/10.1002/admi.201300042" target="_blank" >http://dx.doi.org/10.1002/admi.201300042</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/admi.201300042" target="_blank" >10.1002/admi.201300042</a>

Result language

angličtina

Original language name

Direct Bandgap Silicon: Tensile-Strained Silicon Nanocrystals

Original language description

Silicon, a semiconductor underpinning the vast majority of microelectronics, is an indirect-gap material and consequently is an inefficient light emitter. This hampers the ongoing worldwide effort towards the integration of optoelectronics on silicon wafers. Even though silicon nanocrystals are much better light emitters, they retain the indirect-gap nature. Here, we propose a solution to this long-standing problem: silicon nanocrystals can be transformed into a material with fundamental direct bandgapvia a concerted action of quantum confinement and tensile strain. We document this transformation by DFT calculations mapping the E(k) band-structure of Si nanocrystals. The experimental proofs are then given firstly by a 10 000x increase in the photon emission rate of strained silicon nanocrystals together with their altered absorbance spectra, both of which point to direct dipole-allowed transitions, secondly by single nanocrystal spectroscopy, confirming reduced phonon energies and th

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

S - Specificky vyzkum na vysokych skolach

Publication year

2014

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

ADVANCED MATERIALS INTERFACES

ISSN

2196-7350

e-ISSN

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Volume of the periodical

1

Issue of the periodical within the volume

2

Country of publishing house

DE - GERMANY

Number of pages

9

Pages from-to

"1300042-1"-"1300042-9"

UT code for WoS article

000348282400005

EID of the result in the Scopus database

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