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Band structure of silicon nanocrystals

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471613" target="_blank" >RIV/68378271:_____/16:00471613 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1201/9781315364797-5" target="_blank" >http://dx.doi.org/10.1201/9781315364797-5</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1201/9781315364797-5" target="_blank" >10.1201/9781315364797-5</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Band structure of silicon nanocrystals

  • Original language description

    This chapter puts on a rigorous basis the concept of electronic band structure in semiconductor nanocrystals. We show that, down to a certain limit, this concept has still reasonable meaning, even if the band structure becomes gradually “fuzzy and minigaps appear within the allowed energy bands with decreasing nanocrystal size. The nanocrystals basically remember the basic features of their “parent bulk material. In particular, we demonstrate that hydrogen-capped silicon nanocrystals, fully relaxed geometrically and electronically, retain the indirect-bandgap structure down to 2 nm. Moreover, we reveal, both computationally and experimentally, that mechanical (tensile) strain applied to the Si nanocrystals via proper surface capping makes these nanocrystals a direct-bandgap material, putting them on a par with standard direct-bandgap semiconductors like GaAs.

  • Czech name

  • Czech description

Classification

  • Type

    C - Chapter in a specialist book

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2016

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Book/collection name

    Silicon Nanophotonics. Basic Principles, Present Status, and Perspectives

  • ISBN

    978-981-4669-76-4

  • Number of pages of the result

    36

  • Pages from-to

    109-144

  • Number of pages of the book

    503

  • Publisher name

    Pan Stanford Publishing

  • Place of publication

    Singapore

  • UT code for WoS chapter