Band structure of silicon nanocrystals
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00471613" target="_blank" >RIV/68378271:_____/16:00471613 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1201/9781315364797-5" target="_blank" >http://dx.doi.org/10.1201/9781315364797-5</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1201/9781315364797-5" target="_blank" >10.1201/9781315364797-5</a>
Alternative languages
Result language
angličtina
Original language name
Band structure of silicon nanocrystals
Original language description
This chapter puts on a rigorous basis the concept of electronic band structure in semiconductor nanocrystals. We show that, down to a certain limit, this concept has still reasonable meaning, even if the band structure becomes gradually “fuzzy and minigaps appear within the allowed energy bands with decreasing nanocrystal size. The nanocrystals basically remember the basic features of their “parent bulk material. In particular, we demonstrate that hydrogen-capped silicon nanocrystals, fully relaxed geometrically and electronically, retain the indirect-bandgap structure down to 2 nm. Moreover, we reveal, both computationally and experimentally, that mechanical (tensile) strain applied to the Si nanocrystals via proper surface capping makes these nanocrystals a direct-bandgap material, putting them on a par with standard direct-bandgap semiconductors like GaAs.
Czech name
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Czech description
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Classification
Type
C - Chapter in a specialist book
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Book/collection name
Silicon Nanophotonics. Basic Principles, Present Status, and Perspectives
ISBN
978-981-4669-76-4
Number of pages of the result
36
Pages from-to
109-144
Number of pages of the book
503
Publisher name
Pan Stanford Publishing
Place of publication
Singapore
UT code for WoS chapter
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