Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F12%3A00389613" target="_blank" >RIV/68378271:_____/12:00389613 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1504/IJNT.2012.046750" target="_blank" >http://dx.doi.org/10.1504/IJNT.2012.046750</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1504/IJNT.2012.046750" target="_blank" >10.1504/IJNT.2012.046750</a>
Alternative languages
Result language
angličtina
Original language name
Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation
Original language description
In this contribution, we present a study of silicon nanocrystals as light sources. We compare the photoluminescence properties of silicon nanocrystals with three different types of surface passivation (hydrogen, silicon oxide and methyl-based capping), which has substantial impact. We show that with sufficiently small sizes and suitable surface passivation, the photoluminescence properties of silicon nanocrystals can reach a level comparable with direct-bandgap semiconductor nanocrystals (radiative lifetime of 10 ns, stable macroscopic quantum yield of 20%). Apart from studying photoluminescence properties on a macroscopic level, we also carried out microscopical room-temperature single-nanocrystal photoluminescence spectroscopy experiments.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
International Journal of Nanotechnology
ISSN
1475-7435
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
8/9
Country of publishing house
GB - UNITED KINGDOM
Number of pages
15
Pages from-to
717-731
UT code for WoS article
000303800500005
EID of the result in the Scopus database
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