Theoretical analysis of electronic band structure of 2- to 3-nm Si nanocrystals

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00393325" target="_blank" >RIV/68378271:_____/13:00393325 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.87.195420" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.87.195420</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.87.195420" target="_blank" >10.1103/PhysRevB.87.195420</a>

Result language
angličtina
Original language name
Theoretical analysis of electronic band structure of 2- to 3-nm Si nanocrystals
Original language description
In this paper, we discuss the validity of the band structure concept in silicon nanocrystals a few nanometers in size. We introduce a general method which allows reconstruction of a fuzzy electronic band structure of nanocrystals from ordinary real-spaceelectronic structure calculations. A comprehensive study of the fuzzy band structure of a realistic nanocrystal is given including full geometric and electronic relaxation with the surface passivating groups.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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