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In-plane tunnelling field-effect transistor integrated on Silicon

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10306808" target="_blank" >RIV/00216208:11320/15:10306808 - isvavai.cz</a>

  • Alternative codes found

    RIV/68378271:_____/15:00451373

  • Result on the web

    <a href="http://dx.doi.org/10.1038/srep14367" target="_blank" >http://dx.doi.org/10.1038/srep14367</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/srep14367" target="_blank" >10.1038/srep14367</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    In-plane tunnelling field-effect transistor integrated on Silicon

  • Original language description

    Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalitiesto silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    BM - Solid-state physics and magnetism

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Scientific Reports

  • ISSN

    2045-2322

  • e-ISSN

  • Volume of the periodical

    5

  • Issue of the periodical within the volume

    September

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    7

  • Pages from-to

  • UT code for WoS article

    000361770900001

  • EID of the result in the Scopus database

    2-s2.0-84942746569