In-plane tunnelling field-effect transistor integrated on Silicon

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10306808" target="_blank" >RIV/00216208:11320/15:10306808 - isvavai.cz</a>

Alternative codes found

RIV/68378271:_____/15:00451373

Result on the web

<a href="http://dx.doi.org/10.1038/srep14367" target="_blank" >http://dx.doi.org/10.1038/srep14367</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/srep14367" target="_blank" >10.1038/srep14367</a>

Result language

angličtina

Original language name

In-plane tunnelling field-effect transistor integrated on Silicon

Original language description

Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalitiesto silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numerous demonstrations of the so-called magnetoelectric effect (coupling between ferroelectric and ferromagnetic order) using nearly-perfect heterostructures. However, the scrutiny of the ingredients that lead to magnetoelectric coupling, namely magnetic moment and a conducting channel, does not necessarily require structural perfection. In this work, we circumvent the stringent requirements for epilayers while preserving the magnetoelectric functionality in a silicon-integrated device. Additionally, we have identified an in-plane tunnelling mechanism which responds to a vertical electric field. This

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2015

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Scientific Reports

ISSN

2045-2322

e-ISSN

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Volume of the periodical

5

Issue of the periodical within the volume

September

Country of publishing house

GB - UNITED KINGDOM

Number of pages

7

Pages from-to

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UT code for WoS article

000361770900001

EID of the result in the Scopus database

2-s2.0-84942746569