The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10173498" target="_blank" >RIV/00216208:11320/13:10173498 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1039/c3nr01011b" target="_blank" >http://dx.doi.org/10.1039/c3nr01011b</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1039/c3nr01011b" target="_blank" >10.1039/c3nr01011b</a>
Alternative languages
Result language
angličtina
Original language name
The direct magnetoelectric effect in ferroelectric-ferromagnetic epitaxial heterostructures
Original language description
Ferroelectric (FE) and ferromagnetic (FM) materials engineered in horizontal heterostructures allow interface-mediated magnetoelectric coupling. The so-called converse magnetoelectric effect (CME) has been already demonstrated by electric-field poling ofthe ferroelectric layers and subsequent modification of the magnetic state of adjacent ferromagnetic layers by strain effects and/or free-carrier density tuning. Here we focus on the direct magnetoelectric effect (DME) where the dielectric state of a ferroelectric thin film is modified by a magnetic field. Ferroelectric BaTiO3 (BTO) and ferromagnetic CoFe2O4 (CFO) oxide thin films have been used to create epitaxial FE/FM and FM/FE heterostructures on SrTiO3(001) substrates buffered with metallic SrRuO3. It will be shown that large ferroelectric polarization and DME can be obtained by appropriate selection of the stacking order of the FE and FM films and their relative thicknesses. The dielectric permittivity, at the structural transiti
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GPP204%2F11%2FP339" target="_blank" >GPP204/11/P339: Room temperature electric field control of exchange bias in antiferromagnetic semiconductors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nanoscale [online]
ISSN
2040-3364
e-ISSN
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Volume of the periodical
5
Issue of the periodical within the volume
17
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
8037-8044
UT code for WoS article
000322958800049
EID of the result in the Scopus database
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