Self-assembly of Ge quantum dots on periodically corrugated Si surfaces
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314364" target="_blank" >RIV/00216208:11320/15:10314364 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4935859" target="_blank" >http://dx.doi.org/10.1063/1.4935859</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4935859" target="_blank" >10.1063/1.4935859</a>
Alternative languages
Result language
angličtina
Original language name
Self-assembly of Ge quantum dots on periodically corrugated Si surfaces
Original language description
The fabrication of regularly ordered Ge quantum dot arrays on Si surfaces usually requires extensive preparation processing, ensuring clean and atomically ordered substrates, while the ordering parameters are quite limited by the surface properties of the substrate. Here, we demonstrate a simple method for fabrication of ordered Ge quantum dots with highly tunable ordering parameters on rippled Si surfaces. The ordering is achieved by magnetron sputter deposition, followed by an annealing in high vacuum. We show that the type of ordering and lattice vector parameters of the formed Ge quantum dot lattice are determined by the crystallographic properties of the ripples, i.e., by their shape and orientation. Moreover, the ordering is achieved regardless the initial amorphisation of the ripples surface and the presence of a thin oxide layer. (c) 2015 AIP Publishing LLC.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA14-08124S" target="_blank" >GA14-08124S: High-resolution x-ray diffraction from random layered systems</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Physics Letters
ISSN
0003-6951
e-ISSN
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Volume of the periodical
107
Issue of the periodical within the volume
20
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
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UT code for WoS article
000365688700046
EID of the result in the Scopus database
2-s2.0-84948439236