Picosecond dynamics of photoexcited carriers in silicon nanocrystal/Si3N4 superlattices: Presence of K-0 centers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314721" target="_blank" >RIV/00216208:11320/15:10314721 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4913717" target="_blank" >http://dx.doi.org/10.1063/1.4913717</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4913717" target="_blank" >10.1063/1.4913717</a>
Alternative languages
Result language
angličtina
Original language name
Picosecond dynamics of photoexcited carriers in silicon nanocrystal/Si3N4 superlattices: Presence of K-0 centers
Original language description
We report in detail on the picosecond dynamics of photoexcited charge carriers in size-controlled silicon nanocrystals in silicon nanocrystal/Si3N4 superlattices. The samples were prepared using plasma enhanced chemical vapor deposition and subsequent thermally induced phase separation. The pump and probe transmission technique was used to monitor directly the initial (picosecond) carrier dynamics. The transient transmission signal (decay time about 2 ps) was found to be independent of the nanocrystal size, pump pulse intensity and wavelength from the interval 400 to 700 nm. The signal is attributed to the dynamics of photoexcited carriers captured on the K-0 centers in Si3N4. (C) 2015 AIP Publishing LLC.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA13-12386S" target="_blank" >GA13-12386S: Photoconductivity and dynamics of excitations in nanostructured and disordered semiconductors on ultrafast time scale</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
117
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
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UT code for WoS article
000351134400001
EID of the result in the Scopus database
2-s2.0-84924205231