Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F14%3A10286181" target="_blank" >RIV/00216208:11320/14:10286181 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.physe.2013.09.003" target="_blank" >http://dx.doi.org/10.1016/j.physe.2013.09.003</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.physe.2013.09.003" target="_blank" >10.1016/j.physe.2013.09.003</a>

Result language
angličtina
Original language name
Photoexcited charge carrier dynamics in silicon nanocrystal/SiO2 superlattices
Original language description
We report in detail on the dynamics of photoexcited charge carriers in size-controlled silicon nanocrystals in silicon nanocrystal/SiO2 superlattices. The samples were prepared using plasma enhanced chemical vapor deposition and subsequent thermally induced phase separation. This unique approach allows preparation of well-defined Si nanocrystals. Experimental techniques of time-resolved absorption and photoluminescence were used to monitor the carrier dynamics on a wide time scale from picoseconds to milliseconds for a set of samples with different parameters (nanocrystal size, hydrogen annealing). The initial fast decay (tens of picoseconds) dependent on pump intensity for excitation levels exceeding one electron-hole pair per nanocrystal can be interpreted in terms of the bimolecular recombination with constant B = (2-3) x 10(-10) cm(3) s(-1). The slow pump intensity independent decay (microseconds) can be reproduced well by a stretched-exponential function. The dependence of stretch
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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