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Effect of temperature on photoexcited charge carrier dynamics in Si-NCs/SiO2 superlattices

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10173371" target="_blank" >RIV/00216208:11320/13:10173371 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1117/12.2022723" target="_blank" >http://dx.doi.org/10.1117/12.2022723</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1117/12.2022723" target="_blank" >10.1117/12.2022723</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Effect of temperature on photoexcited charge carrier dynamics in Si-NCs/SiO2 superlattices

  • Original language description

    An experimental study of the temperature dependence of photoluminescence time decay in size-controlled silicon nanocrystals in silicon nanocrystal/SiO2 superlattices is reported. The samples were prepared using thermal evaporation and subsequent thermally induced phase separation. The slow (microseconds) decay line shape is described well by a stretched exponential. The temperature dependence of the photoluminescence dynamics can be understood in terms of thermal activation of recombination processes, including hopping of carriers between localized states. Additional hydrogen treatment causes an increase in both parameters of the stretched exponential function. This behavior is interpreted as a consequence of H-2-passivation of dangling bonds defects.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BH - Optics, masers and lasers

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of SPIE - The International Society for Optical Engineering

  • ISBN

    978-0-8194-9657-7

  • ISSN

    0277-786X

  • e-ISSN

  • Number of pages

    6

  • Pages from-to

    "88070V1"-6

  • Publisher name

    SPIE-INT SOC OPTICAL ENGINEERING

  • Place of publication

    BELLINGHAM

  • Event location

    San Diego, USA

  • Event date

    Aug 25, 2013

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000327304600011