Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388963%3A_____%2F19%3A00511937" target="_blank" >RIV/61388963:_____/19:00511937 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/19:10405407
Result on the web
<a href="https://www.tandfonline.com/doi/full/10.1080/05704928.2018.1517263" target="_blank" >https://www.tandfonline.com/doi/full/10.1080/05704928.2018.1517263</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1080/05704928.2018.1517263" target="_blank" >10.1080/05704928.2018.1517263</a>
Alternative languages
Result language
angličtina
Original language name
Non-exponential decay kinetics: correct assessment and description illustrated by slow luminescence of Si nanostructures
Original language description
The treatment of time-resolved (TR) photoluminescence (PL) decay kinetics is analysed in details and illustrated by experiments on semiconductor quantum dots, namely silicon nanocrystals (Si NCs). We consider the mono-, stretch- and multi-exponential as well as lognormal (LN) and some complex decay models for continuous and discrete distribution of rates (lifetimes). A particular attention is devoted to the thorough analysis of non-exponential decay kinetics. We explicitly show that a LN distribution of emitter sizes may results in LN distribution of decay rates. On the other hand, the distribution of rates cannot be, strictly speaking, Levy stable distribution (that results in the stretched-exponential decay). We introduce theoretical background and derive expressions to calculate the average decay lifetimes for some common decays with practical examples of their applications. Experimental aspects are discussed with special attention devoted to the major problems of the accurate TR PL data treatment, including background uncertainty, pulse duration, system response function etc. Finally, a thorough literature survey of TR PL in Si NCs is given. The methods and definitions outlined in this systematic review are applicable to various other material systems with slow decay like rare-earth and transition metal-doped materials, amorphous semiconductors, type-II heterostructures, singlet oxygen phosphorescence etc.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10403 - Physical chemistry
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Spectroscopy Reviews
ISSN
0570-4928
e-ISSN
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Volume of the periodical
54
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
44
Pages from-to
758-801
UT code for WoS article
000495765000003
EID of the result in the Scopus database
2-s2.0-85065985524