Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10367383" target="_blank" >RIV/00216208:11320/17:10367383 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4999023" target="_blank" >http://dx.doi.org/10.1063/1.4999023</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4999023" target="_blank" >10.1063/1.4999023</a>

Result language
angličtina
Original language name
Photoluminescence performance limits of Si nanocrystals in silicon oxynitride matrices
Original language description
The present comprehensive study of photoluminescence (PL) quantum yield (QY) of Si nanocrystals (SiNCs) in Si-rich oxynitride (SRON) superlattices was performed over a broad set of samples. The PL QY is sensitive mostly to the thickness of SRON and barrier oxide layers and to the passivation procedures. Annealing in hydrogen improves the QY proportionally to the NC surface area by passivating the NC/oxide interface defects present at a surface density of about 2.5 x 10(12) cm(-2). The maximum external QY of nearly 30% is found in well-passivated superlattices with a SiNC size of about 4 nm and a SiO2 barrier thickness of 2 nm or larger. We reveal the existence of an extended near-infrared tail of the PL spectra, whose weak intensity anti-correlates with the external QY. The relative intensity of this emission increases with temperature as well as for strong excitation above the PL saturation level and may be related to excitation energy transfer to the structural defects near NCs. Finally, we discuss the possible mechanisms which are responsible for limiting the attainable PL QY and which may be the subject of future efforts to further increase the PL QY. Published by AIP Publishing.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GC16-09745J" target="_blank" >GC16-09745J: Understanding the Luminescence Efficiency of Silicon Quantum Dots</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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