Barrier-dependent photoluminescence of silicon nanocrystals in quadlayer samples: Inter-layer Si diffusion or excitonic energy transfer?
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F24%3A10489177" target="_blank" >RIV/00216208:11320/24:10489177 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=1H8xY82Bwq" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=1H8xY82Bwq</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.tsf.2024.140456" target="_blank" >10.1016/j.tsf.2024.140456</a>
Alternative languages
Result language
angličtina
Original language name
Barrier-dependent photoluminescence of silicon nanocrystals in quadlayer samples: Inter-layer Si diffusion or excitonic energy transfer?
Original language description
In this work we studied photoluminescence (PL) of silicon nanocrystals (Si NCs) in multilayer samples fabricated from silicon rich oxynitride (SRON)/SiO2 superlattices. Unlike previously well-studied bilayer samples (i.e., pairs of NCs and barrier layers), here two different mean sizes of NCs were prepared in a special quadlayer configuration (i.e., smaller NCs / barrier / larger NCs / barrier). Furthermore, the barrier thicknesses were varied. When the barriers are decreasing from 4.6 nm to 1.8 nm, the PL band is demonstrated to be redshifting, whereas a PL contribution of small NCs is vanishing as expected assuming an exciton diffusion. However, we prove that this effect is related to inter-layer Si diffusion during sample fabrication, which is also a function of barrier thickness. Due to this fact, we registered a loss of luminescent centers in the sub-800 nm spectral range (small Si NCs in thin layers) when quadlayers in multilayer stacks are below a critical thickness. In fact, large Si NCs in thick SRON layers grow in expense of small ones in thin layers because the former have a larger capture crosssection for diffusing Si atoms. In this study we also probe PL of quadlayer samples under varied excitation powers (below and above saturation) and extract lifetime spectral dependencies from measured time-resolved decays in order to prove the above-mentioned nature of the PL.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Thin Solid Films
ISSN
0040-6090
e-ISSN
1879-2731
Volume of the periodical
803
Issue of the periodical within the volume
803
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
10
Pages from-to
140456
UT code for WoS article
001275721200001
EID of the result in the Scopus database
2-s2.0-85199000290