Optical emission from SiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F15%3A10314729" target="_blank" >RIV/00216208:11320/15:10314729 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.92.035432" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.92.035432</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.92.035432" target="_blank" >10.1103/PhysRevB.92.035432</a>
Alternative languages
Result language
angličtina
Original language name
Optical emission from SiO2-embedded silicon nanocrystals: A high-pressure Raman and photoluminescence study
Original language description
We investigate the optical properties of high-quality Si nanocrystals (NCs)/SiO2 multilayers under high hydrostatic pressure with Raman scattering and photoluminescence (PL) measurements. The aim of our study is to shed light on the origin of the opticalemission of the Si NCs/SiO2. The Si NCs were produced by chemical-vapor deposition of Si-rich oxynitride (SRON)/SiO2 multilayers with 5- and 4-nm SRON layer thicknesses on fused silica substrates and subsequent annealing at 1150 degrees C, which resulted in the precipitation of Si NCs with an average size of 4.1 and 3.3 nm, respectively. From the pressure dependence of the Raman spectra we extract a phonon pressure coefficient of 8.5 +/- 0.3 cm(-1)/GPa in both samples, notably higher than that of bulkSi (5.1 cm(-1)/GPa). This result is ascribed to a strong pressure amplification effect due to the larger compressibility of the SiO2 matrix. In turn, the PL spectra exhibit two markedly different contributions: a higher-energy band that r
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
R - Projekt Ramcoveho programu EK
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B - Condensed Matter and Materials Physics
ISSN
1098-0121
e-ISSN
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Volume of the periodical
92
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
7
Pages from-to
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UT code for WoS article
000358601000007
EID of the result in the Scopus database
2-s2.0-84939211024