Chalcogenide-based van derWaals epitaxy: Interface conductivity of tellurium on Si(111)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F17%3A10371421" target="_blank" >RIV/00216208:11320/17:10371421 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1103/PhysRevB.96.035301" target="_blank" >http://dx.doi.org/10.1103/PhysRevB.96.035301</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.96.035301" target="_blank" >10.1103/PhysRevB.96.035301</a>
Alternative languages
Result language
angličtina
Original language name
Chalcogenide-based van derWaals epitaxy: Interface conductivity of tellurium on Si(111)
Original language description
We present a combined experimental and theoretical analysis of a Te rich interface layer which represents a template for chalcogenide-based van der Waals epitaxy on Si(111). On a clean Si(111)-(1 x 1) surface, we find Te to form a Te/Si(111)-(1 x 1) reconstruction to saturate the substrate bonds. A problem arising is that such an interface layer can potentially be highly conductive, undermining the applicability of the on-top grown films in electric devices. We perform here a detailed structural analysis of the pristine Te termination and present direct measurements of its electrical conductivity by in situ distance dependent four-probe measurements. The experimental results are analyzed with respect to density functional theory calculations and the implications of the interface termination with respect to the electrical conductivity of chalcogenide-based topological insulator thin films are discussed. In detail, we find a Te/Si(111)-(1 x 1) interface conductivity of sigma(Te)(2D) = 2.6(5) x 10(-7) S/square, which is small compared to the typical conductivity of topological surface states.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physical Review B
ISSN
2469-9950
e-ISSN
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Volume of the periodical
96
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
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UT code for WoS article
000405023400007
EID of the result in the Scopus database
2-s2.0-85026360499