Growth of SiCAlN on Si(111) via a crystalline oxide interface

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F02%3APU29571" target="_blank" >RIV/00216305:26210/02:PU29571 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

Growth of SiCAlN on Si(111) via a crystalline oxide interface

Original language description

Growth of single-phase SiCAlN epitaxial films with the 2H-wurtzite structure is conducted directly on Si(111) despite the structural differences and large lattice mismatch (19%) between the two materials. Commensurate heteroepitaxy is facilitated by theconversion of native and thermally grown SiO2 layers on Si(111) into crystalline oxides by in situ reactions of the layers with Al atoms and the H3SiCN precursor, forming coherent interfaces with the Si substrate and the film. High-resolution transmissioon electron microscopy and electron energy-loss spectroscopy show that the amorphous SiO2 films are entirely transformed into a crystalline Si-Al-O-N framework in registry with the Si(111) surface. This crystalline interface acts as a template for nucleation and growth of epitaxial SiCAlN. Integration of wide-band-gap semiconductors with Si is readily achieved by this process. (C) 2002 American Institute of Physics.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

—

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Applied Physics Letters

ISSN

0003-6951

e-ISSN

—

Volume of the periodical

81

Issue of the periodical within the volume

12

Country of publishing house

US - UNITED STATES

Number of pages

3

Pages from-to

2181-2183

UT code for WoS article

—

EID of the result in the Scopus database

—