Dense TiO2 films grown by sol?gel dip coating on glass, F-doped SnO2, and silicon substrates

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61388955%3A_____%2F13%3A00384575" target="_blank" >RIV/61388955:_____/13:00384575 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1557/jmr.2012.240" target="_blank" >http://dx.doi.org/10.1557/jmr.2012.240</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1557/jmr.2012.240" target="_blank" >10.1557/jmr.2012.240</a>

Result language
angličtina
Original language name
Dense TiO2 films grown by sol?gel dip coating on glass, F-doped SnO2, and silicon substrates
Original language description
Exceptionally dense titanium dioxide (TiO2) films were prepared via dip coating from a sol containing poly(hexafluorobutyl methacrylate) as the structure-directing agent. The films were grown on glass, F-doped SnO2, and crystalline silicon (111) faces, either pure or with a thin layer of SiO2. The TiO2 films cover perfectly even rough surfaces, which was ascribed to thixotropic properties of the precursor gel. The films provide antireflection function to crystalline Si wafers for photovoltaic applications. The optical reflectance in visible to near-infrared (NIR) wave lengths region is considerably smaller for Si wafers covered by TiO2/SiO2 film compared with that of SiO2/Si. The dense TiO2 films are amorphous with small amount of anatase and monoclinic TiO2(B). These two phases withstand calcination at 900 °C in films deposited on Si. For comparison, porous TiO2 films were grown by the same dip-coating protocol, but with alternative organic additives, either polymers or ionic liquids.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CG - Electrochemistry
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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