Interface engineering for improved growth of GaSb on Si(111)
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F11%3A00370546" target="_blank" >RIV/68378271:_____/11:00370546 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2010.11.167" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2010.11.167</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jcrysgro.2010.11.167" target="_blank" >10.1016/j.jcrysgro.2010.11.167</a>
Alternative languages
Result language
angličtina
Original language name
Interface engineering for improved growth of GaSb on Si(111)
Original language description
Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3x3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7x7) which produces islands. The growth is characterized by atomic force microscopy, electron and x-ray diffraction. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Crystal Growth
ISSN
0022-0248
e-ISSN
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Volume of the periodical
213
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
401-404
UT code for WoS article
000292175000101
EID of the result in the Scopus database
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