Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE.

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F02%3A13020094" target="_blank" >RIV/67985882:_____/02:13020094 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE.

Original language description

We study electrical properties and the photoluminescence /PL/ of Si-doped bulk GaSb grown by metal-organic vapor phase epitaxy. Si was found to behave a substitution shallow acceptor in GaSb with activation energy of 9 meV, which is responsible for the 0.8 eV line in the PL spectrum of GaSb.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

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Volume of the periodical

17

Issue of the periodical within the volume

1

Country of publishing house

GB - UNITED KINGDOM

Number of pages

8

Pages from-to

39-46

UT code for WoS article

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EID of the result in the Scopus database

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