Influence of gallium content on Ga3+ position and photo-and thermally stimulated luminescence in Ce3+-doped multicomponent (Y,Lu)(3)GaxAl(5)xO(12) garnets
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10386441" target="_blank" >RIV/00216208:11320/18:10386441 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/18:00499480
Result on the web
<a href="https://doi.org/10.1016/j.jlumin.2018.04.013" target="_blank" >https://doi.org/10.1016/j.jlumin.2018.04.013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jlumin.2018.04.013" target="_blank" >10.1016/j.jlumin.2018.04.013</a>
Alternative languages
Result language
angličtina
Original language name
Influence of gallium content on Ga3+ position and photo-and thermally stimulated luminescence in Ce3+-doped multicomponent (Y,Lu)(3)GaxAl(5)xO(12) garnets
Original language description
Photoluminescence, thermally stimulated luminescence (TSL) and EPR characteristics of the Ce3+-doped single crystals of multicomponent Y1Lu2GaxAl5-xO12 and Lu3GaxAl5-xO12 garnets with different Ga contents (x = 0, 1, 2, 3, 4, 5) excited in the Ce3+-related absorption bands are investigated in the 9-500 K temperature range. The distribution of Ga3+ and Al3+ ions in the crystal lattice is determined by the NMR method. The relative number of Ga3+ ions in the tetrahedral crystal lattice sites, the maxima positions of the TSL glow curve peaks and the corresponding trap depths are found to decrease linearly with the increasing Ga content. At the same time, the reduction of the activation energy Ea of the TSL glow curve peaks creation under irradiation in the 4f-5d1 absorption band of Ce3+ is strongly nonlinear. To explain this effect, the suggestion is made that Ea is the energy distance between the excited 5d1 level of Ce3+ and a defect level located between the 5d1 level and the bottom of the conduction band and arising from the Ga3+ ion perturbed by the nearest neighboring Ce3+ ion. The elec- trons thermally released from the excited Ce3+ ions are suggested to be trapped at the perturbed Ga3+ ions resulting in the appearance of electron Ga2+ centers. In spite of the fact that the paramagnetic Ga2+ ions were not detected by EPR, the process described above has been found for Fe3+ impurity ions, namely, the electron transfer from the 5d1 excited level of Ce3+ to Fe3+ is directly detected by EPR.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA17-09933S" target="_blank" >GA17-09933S: Local structure and charge trapping phenomena in novel scintillating materials with tailored composition</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Luminescence
ISSN
0022-2313
e-ISSN
—
Volume of the periodical
200
Issue of the periodical within the volume
APR
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
10
Pages from-to
141-150
UT code for WoS article
000432857700021
EID of the result in the Scopus database
2-s2.0-85045541239