Determination of the position of the 5d excited levels of Ce3+ ions with respect to the conduction band in the epitaxial films of the multicomponent (Lu,Gd)3(Ga,Al)5O12:Ce garnets
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F16%3A00465159" target="_blank" >RIV/68378271:_____/16:00465159 - isvavai.cz</a>
Alternative codes found
RIV/00216208:11320/16:10330692
Result on the web
<a href="http://dx.doi.org/10.1016/j.optmat.2016.10.041" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2016.10.041</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.optmat.2016.10.041" target="_blank" >10.1016/j.optmat.2016.10.041</a>
Alternative languages
Result language
angličtina
Original language name
Determination of the position of the 5d excited levels of Ce3+ ions with respect to the conduction band in the epitaxial films of the multicomponent (Lu,Gd)3(Ga,Al)5O12:Ce garnets
Original language description
Temperature dependences of the intensity and decay kinetics of the Ce3+ - related photoluminescence and characteristics of thermally stimulated luminescence are investigated for the epitaxial films of the multicomponent garnets of the type of Lu3xGdxGayAl5-yO12:Ce. Different methods are used for the determination of energy distances between the excited 5d1 and 5d2 levels of Ce3+ ions and the conduction band (CB). The 5d1-CB energy distance is found to decrease with the increasing Ga3+ content. The most drastic decrease which was observed, is suggested to arise from the change in the Ga3+ position from the smaller tetrahedral to larger octahedral Al3+ sites. This effect is explained by the lattice distortion due to the substitution of smaller Lu3+ and Al3+ ions by larger Gd3+ and Ga3+ ions.n
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA16-15569S" target="_blank" >GA16-15569S: Fast thin film scintillators for high resolution 2D-imaging</a><br>
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Optical Materials
ISSN
0925-3467
e-ISSN
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Volume of the periodical
62
Issue of the periodical within the volume
Dec
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
10
Pages from-to
465-474
UT code for WoS article
000390735400066
EID of the result in the Scopus database
2-s2.0-84993280126