Influence of deep levels on the electrical transport properties of CdZnTeSe detectors

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10386797" target="_blank" >RIV/00216208:11320/18:10386797 - isvavai.cz</a>

Result on the web

<a href="https://doi.org/10.1063/1.5063850" target="_blank" >https://doi.org/10.1063/1.5063850</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.5063850" target="_blank" >10.1063/1.5063850</a>

Result language

angličtina

Original language name

Influence of deep levels on the electrical transport properties of CdZnTeSe detectors

Original language description

We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe (CZTS) radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Poisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap-one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS is favorable for high electrical charge transport. Published by AIP Publishing.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project

<a href="/en/project/GA18-06818S" target="_blank" >GA18-06818S: Development of high energy CdSeTe and CdZnSeTe radiation detectors</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2018

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

124

Issue of the periodical within the volume

23

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

000454217800039

EID of the result in the Scopus database

2-s2.0-85058813085