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Influence of deep levels on the electrical transport properties of CdZnTeSe detectors

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F18%3A10386797" target="_blank" >RIV/00216208:11320/18:10386797 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1063/1.5063850" target="_blank" >https://doi.org/10.1063/1.5063850</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.5063850" target="_blank" >10.1063/1.5063850</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Influence of deep levels on the electrical transport properties of CdZnTeSe detectors

  • Original language description

    We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe (CZTS) radiation detectors by comparing experimental data with numerical simulations based on the simultaneous solution of drift-diffusion and Poisson equations, including the Shockley-Read-Hall model of the carrier trapping. We determined the Schottky barrier heights and the Fermi level position from I-V measurements. We measured the time evolution of the electric field and the electrical current after the application of a voltage bias. We observed that the electrical properties of CZTS are fundamentally governed by two deep levels close to the mid-bandgap-one recombination and one hole trap. We show that the hole trap indirectly increases the mobility-lifetime product of electrons. We conclude that the structure of deep levels in CZTS is favorable for high electrical charge transport. Published by AIP Publishing.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/GA18-06818S" target="_blank" >GA18-06818S: Development of high energy CdSeTe and CdZnSeTe radiation detectors</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    124

  • Issue of the periodical within the volume

    23

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    6

  • Pages from-to

  • UT code for WoS article

    000454217800039

  • EID of the result in the Scopus database

    2-s2.0-85058813085