Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F16%3A10331249" target="_blank" >RIV/00216208:11320/16:10331249 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/TNS.2016.2598743" target="_blank" >http://dx.doi.org/10.1109/TNS.2016.2598743</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TNS.2016.2598743" target="_blank" >10.1109/TNS.2016.2598743</a>
Alternative languages
Result language
angličtina
Original language name
Tellurium Secondary-Phase Defects in CdZnTe and their Association With the 1.1-eV Deep Trap
Original language description
Defects located at the EC - 1.1 (eV) level, which are electro-optically active deep traps, generally have been overlooked since their presence cannot be detected except for those in highly resistive CdTe compounds. The origin of this trap is still debated on whether it is from Te vacancies or from dislocations induced by secondary phase defects in Te. We have grown high-resistivity Te-rich CZT ingots to clarify the origin of the 1.1 eV defects and to analyze the defect levels in the CZT samples by current deep level transient spectroscopy (I-DLTS) and photoluminescence (PL). From the analysis, defect levels such as shallow acceptor/donor, A-centers, Cd vacancies and Te antisite appeared to be in both high and low concentrations of Te inclusions, but the level of 1.1-eV defects exhibited dependence on the density of Te inclusion in the CZT samples. We also evaluated the effect of the 1.1-eV deep-level defects on the detector's performance in point view of carrier trapping and de-trapping.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE Transactions on Nuclear Science
ISSN
0018-9499
e-ISSN
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Volume of the periodical
63
Issue of the periodical within the volume
5
Country of publishing house
US - UNITED STATES
Number of pages
5
Pages from-to
2657-2661
UT code for WoS article
000386228400007
EID of the result in the Scopus database
2-s2.0-84992117681