Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125917" target="_blank" >RIV/00216208:11320/12:10125917 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1007/s11664-011-1802-y" target="_blank" >http://dx.doi.org/10.1007/s11664-011-1802-y</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s11664-011-1802-y" target="_blank" >10.1007/s11664-011-1802-y</a>
Alternative languages
Result language
angličtina
Original language name
Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements
Original language description
We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a V-Cd trap suggests thatall Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb-Cd](+)-V (Cd) (2-) ](-). Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V-Cd), and a deep trap at around 1.1 eV.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Electronic Materials
ISSN
0361-5235
e-ISSN
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Volume of the periodical
41
Issue of the periodical within the volume
3
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
488-493
UT code for WoS article
000299930100010
EID of the result in the Scopus database
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