Inhomogeneous resistivity and its effect on CdZnTe-based radiation detectors operating at high radiation fluxes
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10399603" target="_blank" >RIV/00216208:11320/19:10399603 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jxPprE.4gX" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jxPprE.4gX</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1361-6463/ab23e3" target="_blank" >10.1088/1361-6463/ab23e3</a>
Alternative languages
Result language
angličtina
Original language name
Inhomogeneous resistivity and its effect on CdZnTe-based radiation detectors operating at high radiation fluxes
Original language description
Cadmium telluride (CdTe) and its compounds are the materials of choice for producing industrial quality hard x-ray and gamma ray detectors with high spectral resolution and signal-to-noise ratio. However, optimization of the growth process still proves challenging as the yield is small due to inhomogeneities in the material parameters. Here we investigated the influence of inhomogeneous resistivity on charge collection efficiency of CdZnTe radiation detectors operating at high photon fluxes of incoming radiation. We applied a complex of experimental methods-contactless resistivity and photoconductivity mapping, photoluminescence and laser-induced transient current technique. We observed that the charge collection efficiency at low fluxes is nearly independent of resistivity, while at high fluxes the performance of high resistivity part substantially decreases when compared to the lower resistivity part. This behavior is explained by characteristic evolution of defect structure attaining shallow defect self-compensation during the cooling of the solidified crystal. Instabilities at impurity segregation and temperature gradients at the crystal growth cause different concentration of defects that manifest themselves as deep energy levels within the material bandgap. The defect self-compensation is successfully simulated by theoretical model considering defect reactions in tellurium-saturated CdZnTe.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA18-06818S" target="_blank" >GA18-06818S: Development of high energy CdSeTe and CdZnSeTe radiation detectors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Physics D - Applied Physics
ISSN
0022-3727
e-ISSN
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Volume of the periodical
52
Issue of the periodical within the volume
32
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
325109
UT code for WoS article
000471631000001
EID of the result in the Scopus database
2-s2.0-85070103236