Modelling Polarization Effects in a CdZnTe Sensor at Low Bias

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10472693" target="_blank" >RIV/00216208:11320/23:10472693 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2Ckpawk_xP" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=2Ckpawk_xP</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/s23125681" target="_blank" >10.3390/s23125681</a>

Result language
angličtina
Original language name
Modelling Polarization Effects in a CdZnTe Sensor at Low Bias
Original language description
Semi-insulating CdTe and CdZnTe crystals fabricated into pixelated sensors and integrated into radiation detection modules have demonstrated a remarkable ability to operate under rapidly changing X-ray irradiation environments. Such challenging conditions are required by all photon-counting-based applications, including medical computed tomography (CT), airport scanners, and non-destructive testing (NDT). Although, maximum flux rates and operating conditions differ in each case. In this paper, we investigated the possibility of using the detector under high-flux X-ray irradiation with a low electric field satisfactory for maintaining good counting operation. We numerically simulated electric field profiles visualized via Pockels effect measurement in a detector affected by high-flux polarization. Solving coupled drift-diffusion and Poisson's equations, we defined the defect model, consistently depicting polarization. Subsequently, we simulated the charge transport and evaluated the collected charge, including the construction of an X-ray spectrum on a commercial 2-mm-thick pixelated CdZnTe detector with 330 µm pixel pitch used in spectral CT applications. We analyzed the effect of allied electronics on the quality of the spectrum and suggested setup optimization to improve the shape of the spectrum.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10306 - Optics (including laser optics and quantum optics)

Project
<a href="/en/project/GA19-11920S" target="_blank" >GA19-11920S: Charge transport in pixelated CdZnTe radiation detectors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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