Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10399604" target="_blank" >RIV/00216208:11320/19:10399604 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26620/19:PU144261
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=qUqauhl3Gy" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=qUqauhl3Gy</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jallcom.2019.02.305" target="_blank" >10.1016/j.jallcom.2019.02.305</a>
Alternative languages
Result language
angličtina
Original language name
Thickness of sublimation grown SiC layers measured by scanning Raman spectroscopy
Original language description
We have grown homoepitaxial high resistivity SiC layers on conducting SiC substrates. We develop a method to determine the thickness of grown layers by scanning confocal Raman spectroscopy (SCRS). We also grow epitaxial graphene on SiC layers to label the top sample surface, and, we correlate the top surface position with Rayleigh scattering (RS). The interface between the high resistivity SiC layer and conductive SiC substrate is probed by the transition from LO phonon to the coupled LO phonon-plasmon Raman mode. The layer thickness measurements are verified by ellipsometry and Secondary Ion Mass Spectroscopy (SIMS). We show that the SCRS method provides superior lateral and vertical resolution, it is robust against errorneous conclusions based on ad-hoc models, and it is easy to implement. (C) 2019 Elsevier B.V. All rights reserved.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Alloys and Compounds
ISSN
0925-8388
e-ISSN
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Volume of the periodical
789
Issue of the periodical within the volume
789
Country of publishing house
CH - SWITZERLAND
Number of pages
6
Pages from-to
607-612
UT code for WoS article
000464542700070
EID of the result in the Scopus database
2-s2.0-85062683720