Properties of Nitrogen/Silicon Doped Vertically Oriented Graphene Produced by ICP CVD Roll-to-Roll Technology
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F19%3A10405520" target="_blank" >RIV/00216208:11320/19:10405520 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=~VzvkgYeAX" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=~VzvkgYeAX</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/coatings9010060" target="_blank" >10.3390/coatings9010060</a>
Alternative languages
Result language
angličtina
Original language name
Properties of Nitrogen/Silicon Doped Vertically Oriented Graphene Produced by ICP CVD Roll-to-Roll Technology
Original language description
Simultaneous mass production of high quality vertically oriented graphene nanostructures and doping them by using an inductively coupled plasma chemical vapor deposition (ICP CVD) is a technological problem because little is understood about their growth mechanism over enlarged surfaces. We introduce a new method that combines the ICP CVD with roll-to-roll technology to enable the in-situ preparation of vertically oriented graphene by using propane as a precursor gas and nitrogen or silicon as dopants. This new technology enables preparation of vertically oriented graphene with distinct morphology and composition on a moving copper foil substrate at a lower cost. The technological parameters such as deposition time (1-30 min), gas partial pressure, composition of the gas mixture (propane, argon, nitrogen or silane), heating treatment (1-60 min) and temperature (350-500 degrees C) were varied to reveal the nanostructure growth, the evolution of its morphology and heteroatom's intercalation by nitrogen or silicon. Unique nanostructures were examined by FE-SEM microscopy, Raman spectroscopy and energy dispersive X-Ray scattering techniques. The undoped and nitrogen- or silicon-doped nanostructures can be prepared with the full area coverage of the copper substrate on industrially manufactured surface defects. Longer deposition time (30 min, 450 degrees C) causes carbon amorphization and an increased fraction of sp(3)-hybridized carbon, leading to enlargement of vertically oriented carbonaceous nanostructures and growth of pillars.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Coatings
ISSN
2079-6412
e-ISSN
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Volume of the periodical
9
Issue of the periodical within the volume
1
Country of publishing house
CH - SWITZERLAND
Number of pages
24
Pages from-to
60
UT code for WoS article
000457786200059
EID of the result in the Scopus database
2-s2.0-85060554157