Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnO(x)heterojunctions

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10423194" target="_blank" >RIV/00216208:11320/20:10423194 - isvavai.cz</a>

Result on the web

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=QyZam-Is5G" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=QyZam-Is5G</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/d0ta02198a" target="_blank" >10.1039/d0ta02198a</a>

Result language

angličtina

Original language name

Perovskite ferroelectric thin film as an efficient interface to enhance the photovoltaic characteristics of Si/SnO(x)heterojunctions

Original language description

The photovoltaic (PV) response of SnOx/Si heterojunctions (HJs) through the change of the SnO and SnO(2)ratio in the samples that allows us to obtain p- or n-type SnO(x)films is investigated in this work. The values of short-circuit photocurrent density (J(sc)), open-circuit voltage (V-OC), fill factor (FF) and power conversion efficiency (PCE) are found to be 12.6 mA cm(-2), 0.23 V, 27% and 8.3%, for the p-SnOx/n-Si HJ and 10.3 mA cm(-2), 0.20 V, 20% and 4.5% for the n-SnOx/p-Si HJ. The enhanced PV effect observed in the p-SnOx/n-Si HJs can be attributed to a small band offset between SnO(x)and Si, which lowers the diffusion length that can contribute to higher recombination rate and smaller series resistance. Furthermore, the values ofJ(sc),V-OC, FF and PCE were enhanced up to 30.9 mA cm(-2), -2.0 V, 19% and 10.9%, respectively, through the insertion of a 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(BCZT) ferroelectric layer between n-Si and p-SnOx. The built-in field developed at the Si/BCZT/SiOx/SnO(x)interfaces together with the depolarizing field, provides a favorable electric potential for the separation and further transport of photo generated electron-hole (e-h) pairs. This work provides a viable approach by combining ferroelectrics with p-SnOx/n-Si HJs for building efficient ferroelectric-based solar cells.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

10305 - Fluids and plasma physics (including surface physics)

Project

<a href="/en/project/LM2018116" target="_blank" >LM2018116: Surface Physics Laboratory - Materials Science Beamline</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2020

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Materials Chemistry A

ISSN

2050-7488

e-ISSN

—

Volume of the periodical

8

Issue of the periodical within the volume

22

Country of publishing house

GB - UNITED KINGDOM

Number of pages

13

Pages from-to

11314-11326

UT code for WoS article

000541615200020

EID of the result in the Scopus database

2-s2.0-85086453550