HfO2-Al2O3 Dielectric Layer for a Performing Metal-Ferroelectric-Insulator-Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 Thin Film
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10423249" target="_blank" >RIV/00216208:11320/20:10423249 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=X2HDe3I7.l" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=X2HDe3I7.l</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acsaelm.0c00480" target="_blank" >10.1021/acsaelm.0c00480</a>
Alternative languages
Result language
angličtina
Original language name
HfO2-Al2O3 Dielectric Layer for a Performing Metal-Ferroelectric-Insulator-Semiconductor Structure with a Ferroelectric 0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3 Thin Film
Original language description
In this work, the ferroelectric and fatigue characteristics of Au/0.5Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3(BCZT)/Si metal-ferroelectric-semiconductor (MFS) structures are investigated. Moreover, the effect of introducing a thin dielectric HfO2-Al2O3 (HAO) layer with different thicknesses between the BCZT layer and the Si substrate on the ferroelectric characteristics in the metal-ferroelectric-insulator-semiconductor (MFIS) configuration is evaluated. It is evidenced that the insertion of the HAO layer with a thickness of 8 nm improves the memory window of the capacitance-voltage (C-V) curves by 106% compared to the value obtained in the MFS structure and reduces the leakage currents. Furthermore, the Au/BCZT/HAO (8 nm)/Si structure shows a remarkable remnant polarization (P-r) of 7.8 mu C/cm(2), with a coercive voltage of 1.9 V. The obtained value for P-r corresponds to a six times enhancement when compared to the value obtained in the Au/BCZT/Si structure. In addition, the fatigue studies reveal that the P-r obtained in the Au/BCZT/HAO/Si structure slightly decreases (3%) with continuous cycling, up to 10(9) cycles. The present work evidences that Au/BCZT/HAO/Si structures are promising for nonvolatile memory applications.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
<a href="/en/project/LM2018116" target="_blank" >LM2018116: Surface Physics Laboratory - Materials Science Beamline</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
ACS APPLIED ELECTRONIC MATERIALS
ISSN
2637-6113
e-ISSN
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Volume of the periodical
2
Issue of the periodical within the volume
9
Country of publishing house
US - UNITED STATES
Number of pages
8
Pages from-to
2780-2787
UT code for WoS article
000575420800012
EID of the result in the Scopus database
2-s2.0-85093665729