The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU135341" target="_blank" >RIV/00216305:26620/19:PU135341 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S1369800119309527?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1369800119309527?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.mssp.2019.104587" target="_blank" >10.1016/j.mssp.2019.104587</a>
Alternative languages
Result language
angličtina
Original language name
The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
Original language description
The I-V and C-V measurements have been performed on the Al/YMn0.90Os0.10O3 (YMOO)/p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p-Si wafer by radio frequency (rf) magnetron sputtering technique using a polycrystalline YMOO single target. The surface roughness of the obtained YMOO thin film has been studied by atomic force microscope (AFM). Furthermore, the oxidation states of individual components, Y and O, have been investigated via X-ray photoelectron spectroscopy (XPS) analyses. A barrier height (BH) value of Phi(IV) = 0.89 eV for the Al/YMOO/p-Si structure has been subtracted from the I-V curves at 300 K. The obtained value of BH value is higher than the value of the conventional Al/p-Si diode, 0.58 eV. The linear relation of ln(I-F/V-F(2)) vs V-F(-1) plot has indicated that Fowler-Nordheim tunneling current affects through the interfacial layer at each temperature. The BH from C-D(-2) versus V-D curves has been obtained as Phi(CV) = 0.38 eV at 300 K and this value is lower than the value of Phi(IV) = 0.89 eV at 300 K eV. Such behavior is unexpected because the value of Phi(CV) is higher than that of Phi(IV) at the same temperature in the heterojunctions or metal-semiconductor contacts.
Czech name
—
Czech description
—
Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
—
Continuities
O - Projekt operacniho programu
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
ISSN
1369-8001
e-ISSN
1873-4081
Volume of the periodical
102
Issue of the periodical within the volume
1
Country of publishing house
GB - UNITED KINGDOM
Number of pages
7
Pages from-to
1-7
UT code for WoS article
000477637200010
EID of the result in the Scopus database
—