All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26620%2F19%3APU135352" target="_blank" >RIV/00216305:26620/19:PU135352 - isvavai.cz</a>

  • Result on the web

    <a href="https://aip.scitation.org/doi/10.1063/1.5094129" target="_blank" >https://aip.scitation.org/doi/10.1063/1.5094129</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.5094129" target="_blank" >10.1063/1.5094129</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

  • Original language description

    Among the multiferroics, yttrium manganite YMnO3 (YMO) is one of the most frequently studied magnetic ferroelectric oxides and has attracted a great deal of concern, thanks to its potential magnetoelectric features. Furthermore, it has been reported in the literature that yttrium manganite is a useful interface material in thin film devices. It has been documented that the dopant into Y and/or Mn site(s) plays significant roles on the electrical and magnetic properties of YMO. The YMn0.95Os0.05O3 (YMOO) oxide powders were prepared by the well-known solid-state reaction technique. The YMOO thin films were deposited on the p-Si (100) substrate via a radio frequency sputtering method with a thickness of approximately 62nm. The oxidation states of the constituted elements have been investigated by using the X-ray photoelectron spectroscopy method. Furthermore, the surface features of the obtained thin film have been investigated using a scanning electron microscope measurement. The I-V measurements were performed in the 50-310K range, and consequently, the Schottky diodelike reverse and forward bias I-V characteristics were observed in the Al/YMOO/p-Si heterojunction. Moreover, the ideality factor and the barrier height values were calculated as 0.77 and 2.23 at room temperature, respectively.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

  • Continuities

    O - Projekt operacniho programu

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

    1089-7550

  • Volume of the periodical

    125

  • Issue of the periodical within the volume

    21

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    10

  • Pages from-to

    „214104-1“-„214104-10“

  • UT code for WoS article

    000470721900046

  • EID of the result in the Scopus database