Enhanced Electrocatalytic Activity in GaSe and InSe Nanosheets: The Role of Surface Oxides
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F20%3A10423827" target="_blank" >RIV/00216208:11320/20:10423827 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=QvlB1f0nFH" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=QvlB1f0nFH</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/adfm.202005466" target="_blank" >10.1002/adfm.202005466</a>
Alternative languages
Result language
angličtina
Original language name
Enhanced Electrocatalytic Activity in GaSe and InSe Nanosheets: The Role of Surface Oxides
Original language description
Gallium selenide (GaSe) is a van der Waals semiconductor widely used for optoelectronic devices, whose performances are dictated by bulk properties, including band-gap energy. However, recent experimental observations that the exfoliation of GaSe into atomically thin layers enhances performances in electrochemistry and photocatalysis have opened new avenues for its applications in the fields of energy and catalysis. Here, it is demonstrated by surface-science experiments and density functional theory (DFT) that the oxidation of GaSe into Ga2O3, driven by Se vacancies and edge sites created in the exfoliation process, plays a pivotal role in catalytic processes. Specifically, both hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) are energetically unfavorable in pristine GaSe, due to energy barriers of 1.9 and 5.7-7.4 eV, respectively. On the contrary, energy barriers are reduced concurrently with surface oxidation. Especially, the Heyrovsky step (H-ads + H+ + e(-) -> H-2) of HER becomes energetically favorable only in sub-stoichiometric Ga2O2.97(-0.3 eV/H+). It is also discovered that the same mechanisms occur for the case of the parental compound indium selenide (InSe), thus ensuring the validity of the model for the broad class of III-VI layered semiconductors.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10305 - Fluids and plasma physics (including surface physics)
Result continuities
Project
<a href="/en/project/LM2018116" target="_blank" >LM2018116: Surface Physics Laboratory - Materials Science Beamline</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Advanced Functional Materials
ISSN
1616-301X
e-ISSN
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Volume of the periodical
30
Issue of the periodical within the volume
43
Country of publishing house
DE - GERMANY
Number of pages
11
Pages from-to
2005466
UT code for WoS article
000567837700001
EID of the result in the Scopus database
2-s2.0-85090789114