Space charge formation in the high purity semi-insulating bulk 4H-silicon carbide

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10446672" target="_blank" >RIV/00216208:11320/22:10446672 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=Tje_wNha.M" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=Tje_wNha.M</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jallcom.2022.164078" target="_blank" >10.1016/j.jallcom.2022.164078</a>

Result language
angličtina
Original language name
Space charge formation in the high purity semi-insulating bulk 4H-silicon carbide
Original language description
We investigated the carrier transport and space charge formation in the high purity semi-insulating 4H-SiC bulk single crystal. Using the Laser-induced Transient Current Technique we observed anomalous short current waveform oscillations that are caused by very short carrier lifetime <= 1 ns. We conclude from a detailed inspection of current waveform shape completed by the analysis of collected charge that the electron mobility decreases in an increasing electric field. The saturation value of electron drift velocity 8.7 x 106^6 cm(2)s(-1) was evaluated. The Hall effect measurement revealed the n-type electrical conductivity and dominant donor energy of E-D = 0.85 eV. We also observed the blocking character of prepared Au contacts, which induce the electron depletion and positive space charge formation in biased sample. The continuous increase of the space charge in a wide time interval of 10(-1) s-10(4) s, attested to testified on a presence of a dispersed impurity band localized below the Fermi energy. Based on these findings, we proposed a theoretical model describing the observed phenomena very well.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
<a href="/en/project/GA18-12449S" target="_blank" >GA18-12449S: Charge transport in SiC radiation detectors.</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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