Low-Temperature Annealing of CdZnTeSe under Bias
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10451156" target="_blank" >RIV/00216208:11320/22:10451156 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=a~YUPAPhvy" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=a~YUPAPhvy</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.3390/s22010171" target="_blank" >10.3390/s22010171</a>
Alternative languages
Result language
angličtina
Original language name
Low-Temperature Annealing of CdZnTeSe under Bias
Original language description
We performed a gradual low-temperature annealing up to 360 K on a CdZnTeSe radiation detector equipped with gold and indium electrodes under bias at both polarities. We observed significant changes in the detector's resistance and space-charge accumulation. This could potentially lead to the control and improvement of the electronic properties of the detector because the changes are accompanied with the reduction in the bulk dark current and surface leakage current. In this article, we present the results of a detailed study of the internal electric field and conductivity changes in CdZnTeSe detector for various annealing steps under bias taking into account different polarities during annealing and subsequent characterization. We observed that low-temperature annealing results in an increase in the barrier height at the contacts that, in general, reduces the dark current and decreases the positive space charge present in the sample compared to the pre-annealed condition.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA19-17783S" target="_blank" >GA19-17783S: Photoplasticity of CdTe and CdZnTe single crystals at various experimental conditions</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Sensors
ISSN
1424-8220
e-ISSN
1424-8220
Volume of the periodical
22
Issue of the periodical within the volume
1
Country of publishing house
CH - SWITZERLAND
Number of pages
10
Pages from-to
171
UT code for WoS article
000741134100001
EID of the result in the Scopus database
2-s2.0-85121746458