The influence of surface roughness on the presence of polymorphs and defect states in P3HT layers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F22%3A10454517" target="_blank" >RIV/00216208:11320/22:10454517 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=_l9pPmkwqJ" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=_l9pPmkwqJ</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2021.151539" target="_blank" >10.1016/j.apsusc.2021.151539</a>
Alternative languages
Result language
angličtina
Original language name
The influence of surface roughness on the presence of polymorphs and defect states in P3HT layers
Original language description
Despite extensive studies on the archetypal poly(3-hexylthiophene-2,5-diyl) (P3HT) over the past decade, a concurrent investigation of the surface roughness influence on polymorphism, density of states (DOS), photoluminescence (PL), and hole mobility is missing. We report on the effect of substrate roughness on the optical and electrical properties of P3HT thin films deposited on smooth c-Si (roughness < 1 nm) and rough ITO (roughness similar to 6 nm) substrates. Grazing-incidence wide-angle X-ray scattering and the energy-resolved electrochemical impedance spectroscopy were used to correlate the two polymorphs with the defect DOS in P3HT thin film grown on ITO substrate. The Jablonski diagram reconstructed from PL spectra elucidates the PL bleaching associated with sub-bandgap defect states above the highest occupied molecular orbital found in the case of the rough ITO substrate. A decrease in the PL intensity of the 0-1 transition caused by this extra band of defect states is presumably due to a non-radiative transition from the excited to the ground state or reduction of transition probability. The observed sub-band gap states have no effect on hole mobility. However, the continuum of gap states, which increases with decreasing layer thickness on both substrates, lowers the hole mobility by one order.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Volume of the periodical
573
Issue of the periodical within the volume
leden
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
151539
UT code for WoS article
000724787700002
EID of the result in the Scopus database
2-s2.0-85117566755