Temperature-dependent study of the fabricated ZnS/p-Si heterojunction
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10468616" target="_blank" >RIV/00216208:11320/23:10468616 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=boZvDi0_jJ" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=boZvDi0_jJ</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.physb.2023.414831" target="_blank" >10.1016/j.physb.2023.414831</a>
Alternative languages
Result language
angličtina
Original language name
Temperature-dependent study of the fabricated ZnS/p-Si heterojunction
Original language description
In the present work, ZnS thin film was deposited onto a p-type Si-substrate using the chemical bath deposition method, and subsequently Ag/n-ZnS/p-Si/Ag heterojunction device was fabricated to investigate its diode parameters in the temperature range of 0-60 degrees C. Cubic zinc blende phase of the prepared ZnS thin film was confirmed using grazing incidence X-ray diffraction (GIXRD); Scherrer analysis revealed a lower limit of crystallite size as 2.4 nm. Scanning electron microscopy (SEM) revealed the surface morphology of the prepared ZnS thin film, which exhibited good homogeneity and density. UV-Visible absorption spectroscopy revealed the good UV-region absorbance and visible-region transmittance of the deposited ZnS thin film. The corresponding energy band gap was obtained from Tauc analysis and found to be 3.88eV. Photoluminescent emission (PLE) spectroscopy showed the defect mediated radiative transitions in the deposited ZnS thin film. Current-voltage (I-V) measurements of the fabricated heterojunction device exhibited Schottky diode behaviour. Diode parameters of reverse saturation current, Schottky barrier height, ideality factor and series resistance were obtained from the I-V measurements in the temperature range of 0-60 degrees C; barrier height was obtained in the range of 0.87-0.74eV, and ideality factor was obtained close to unity for I-V measurements made at 30 degrees C and 60 degrees C.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Physica B: Condensed Matter
ISSN
0921-4526
e-ISSN
1873-2135
Volume of the periodical
657
Issue of the periodical within the volume
květen
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
414831
UT code for WoS article
001032586000001
EID of the result in the Scopus database
2-s2.0-85150880394