Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00557316" target="_blank" >RIV/68378271:_____/22:00557316 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/22:00358002 RIV/68407700:21460/22:00358002
Result on the web
<a href="https://doi.org/10.1016/j.diamond.2022.109088" target="_blank" >https://doi.org/10.1016/j.diamond.2022.109088</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2022.109088" target="_blank" >10.1016/j.diamond.2022.109088</a>

Result language
angličtina
Original language name
Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers
Original language description
Pseudo-vertical diodes on 113 homoepitaxial boron-doped diamond (h-BDD) were fabricated using Mo for both Schottky and ohmic contacts. After metal deposition, diodes were stabilized by annealing for 20 min at 300°C and their I-V and C-V characteristics were measured at temperatures from 30 to 180°C. Results show that Mo forms a very good and stable Schottky contact on 113 h-BDD. At 180°C, forward current densities higher than 1kA/cm2 are achieved, while the reverse current density stays unchanged at 10−8 A/cm2. The ideality factor of the diode I-V characteristic drops to 1.23 and the barrier height of the Schottky contact increases to 1.71 eV. This effect is attributed to inhomogeneity in the Schottky barrier. These characteristics are fully comparable with those of the best Schottky diodes fabricated on 100 h-BDD. Results confirm that the use of 113 h-BDD for the fabrication of high-temperature power devices is advantageous, as it enables high quality Schottky and ohmic contacts.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2022
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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