Vertical Schottky diode on (113) oriented homoepitaxial diamond
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F24%3A00585874" target="_blank" >RIV/68378271:_____/24:00585874 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21230/24:00375042
Result on the web
<a href="https://doi.org/10.1016/j.diamond.2024.111180" target="_blank" >https://doi.org/10.1016/j.diamond.2024.111180</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.diamond.2024.111180" target="_blank" >10.1016/j.diamond.2024.111180</a>
Alternative languages
Result language
angličtina
Original language name
Vertical Schottky diode on (113) oriented homoepitaxial diamond
Original language description
Vertical Schottky diodes were fabricated on (113) oriented diamond substrates produced from thick heavily boron doped (NA ∼ 3.5 × 1020 cm−3) diamond layers grown on HPHT-grown synthetic Ib diamond crystals. The p+-substrates were overgrown by a low doped p-epilayer whose surface layer was compensated up to the depth of 0.1 to 0.3 μm. The surface was then oxygen terminated and covered by evaporated Mo/Au Schottky contacts. The bottom ohmic contact to p+-substrate was formed by Ti/Au bi-layer. Current- and capacitance-voltage characteristics of the realized diodes were measured at temperatures ranging from 25 to 180 °C. At room temperature, the realized diodes show high forward current densities JF = 100 A/cm2 and low differential ON-state specific resistance Ron_sp = 3.7 mΩ.cm2 at forward voltage VF = 4 V and a very low leakage (JR < 10−9 A/cm2) in the blocking regime.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Diamond and Related Materials
ISSN
0925-9635
e-ISSN
1879-0062
Volume of the periodical
146
Issue of the periodical within the volume
June
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
111180
UT code for WoS article
001237466900001
EID of the result in the Scopus database
2-s2.0-85192565705