Particle detectors based on semiconducting InP epitaxial layers

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F11%3A00368041" target="_blank" >RIV/67985882:_____/11:00368041 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1088/1748-0221/6/01/C01072" target="_blank" >http://dx.doi.org/10.1088/1748-0221/6/01/C01072</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/6/01/C01072" target="_blank" >10.1088/1748-0221/6/01/C01072</a>

Result language
angličtina
Original language name
Particle detectors based on semiconducting InP epitaxial layers
Original language description
In this work, we present study of electrical properties and detection performance of two types of InP detector structures: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on ahigh purity InP:Pr layers of both n- and p- type conductivity with carrier concentration on the order of 1014 cm-3 grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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