Particle detectors based on InP Schottky diodes

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F67985882%3A_____%2F12%3A00387285" target="_blank" >RIV/67985882:_____/12:00387285 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Particle detectors based on InP Schottky diodes

Original language description

A study of electrical properties and detection performance of Indium Phosphide detector structures with Schottky contacts prepared on high purity p-type InP was performed. Schottky barrier detectors were prepared by vacuum evaporation of Pd on p-type epitaxial layers grown on Zn-doped p-type substrates. The detection performance of the detectors was characterized by the measurement of pulse-height spectra with alpha particles emitted from 241Am source at room temperature. The influence of the quality ofp-type epitaxial layers on the charge-collection efficiency and energy resolution in the full-width half-maximum is discussed

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Volume of the periodical

10

Issue of the periodical within the volume

7

Country of publishing house

GB - UNITED KINGDOM

Number of pages

6

Pages from-to

"C100051"-"C100055"

UT code for WoS article

000310834800005

EID of the result in the Scopus database

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