Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F23%3A10473298" target="_blank" >RIV/00216208:11320/23:10473298 - isvavai.cz</a>
Result on the web
<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ZhBqy~U2nu" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=ZhBqy~U2nu</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OE.502197" target="_blank" >10.1364/OE.502197</a>
Alternative languages
Result language
angličtina
Original language name
Investigation of internal electric fields in graphene/6H-SiC under illumination by the Pockels effect
Original language description
In this paper, we introduce a method for mapping profiles of internal electric fields in birefringent crystals based on the electro-optic Pockels effect and measuring phase differences of low-intensity polarized light. In the case of the studied 6H-SiC crystal with graphene electrodes, the experiment is significantly affected by birefringence at zero bias voltage applied to the crystal and a strong thermo-optical effect. We dealt with these phenomena by adding a Soleil-Babinet compensator and using considerations based on measurements of crystal heating under laser illumination. The method can be generalized and adapted to any Pockels crystal that can withstand sufficiently high voltages. We demonstrate the significant formation of space charge in semi-insulating 6H-SiC under illumination by above-bandgap light.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
<a href="/en/project/GA22-20020S" target="_blank" >GA22-20020S: Development of epitaxial-graphene transistor utilizing optical doping</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Optics Express
ISSN
1094-4087
e-ISSN
1094-4087
Volume of the periodical
31
Issue of the periodical within the volume
21
Country of publishing house
US - UNITED STATES
Number of pages
20
Pages from-to
34123-34142
UT code for WoS article
001408451000001
EID of the result in the Scopus database
2-s2.0-85174798954