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Graphene-insulator-metal diodes: Enhanced dielectric strength of the Al2O3 barrier

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F24%3A10487246" target="_blank" >RIV/00216208:11320/24:10487246 - isvavai.cz</a>

  • Result on the web

    <a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jlSBiF7Zpy" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=jlSBiF7Zpy</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/5.0223763" target="_blank" >10.1063/5.0223763</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Graphene-insulator-metal diodes: Enhanced dielectric strength of the Al2O3 barrier

  • Original language description

    We studied the transport properties of graphene-insulator-metal tunneling diodes. Two sets of tunneling diodes with Ti-Cu and Cr-Au top contacts are fabricated. Transport measurements showed state-of-the-art non-linearity and a critical influence of the top metals on the dielectric strength of the tunneling barrier. X-ray photoelectron spectroscopy indicated two methods for enhancing the dielectric strength of the tunneling barrier. These are the optimized seed layers for the growth of high-quality conformal insulators and the selection of appropriate top metal layers with a small diffusion coefficient and electromigration into the Al(2)O(3) barrier. The Cr-Au top contact provides superior characteristics to the Ti-Cu metallization. X-ray photoelectron spectroscopy showed significant diffusion of titanium during the Al(2)O(3) growth and the formation of titanium inclusions after annealing. Chromium diffusion is slower than that of titanium, making chromium contact more suitable for the reliable operation of tunneling diodes. As a result, we demonstrate a 40% improvement in the dielectric strength of the tunneling barrier compared to state-of-the-art metal-insulator-metal diodes.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

    <a href="/en/project/GC21-28470J" target="_blank" >GC21-28470J: Ultra-fast rectifiers for time-resolved terahertz spectroscopy</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2024

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    AIP Advances

  • ISSN

    2158-3226

  • e-ISSN

    2158-3226

  • Volume of the periodical

    14

  • Issue of the periodical within the volume

    9

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    9

  • Pages from-to

    095207

  • UT code for WoS article

    001307991400004

  • EID of the result in the Scopus database

    2-s2.0-85203406537